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IS31AP2110 integrated silicon solution, inc. ? www.issi.com 1 rev. a, 09/01/2014 20w stereo class-d audio am plifier with power limit and dynamic temperature control september 2014 general description the IS31AP2110 is a high efficiency stereo class-d audio amplifier with adjustable power limit function and dynamic temperature control. the loudspeaker driver operates from 8~26v supply voltage and analog circuit operates at 3.3v supply voltage. it can deliver 20w/ch output power into 8 ? loudspeaker within 0.2% thd+n and without external heat sink when playing music. IS31AP2110 provides parallel btl (mono) application, and it can deliver 40w into 4 ? loudspeaker within 0.11% thd+n. the adjustable power limit function allows user to set a voltage rail lower than half of 3.3v to limit the amount of current through the speaker. output dc detection prev ents speaker damage from long-time current stress. the dynamic temperature control is a gain control system. as chip junction temperature higher than a warning level, the gain level will decrease until junction temperature lower than the warning level. the output short circuit and over temperature protection include auto-recovery feature. the IS31AP2110 is available in a thermally enhanced etssop-28 package. features ? single supply voltage - 8v ~ 26v for loudspeaker driver - built-in ldo output 3.3v for others ? loudspeaker power from 24v supply - btl mode: 20w/ch into 8 ? @0.2% thd+n - pbtl mode: 40w/ch into 4 ? @0.11% thd+n ? loudspeaker power from 13v supply - btl mode: 10w/ch into 8 ? @10% thd+n ? 87% efficient class-d operation eliminates need for heat sink ? differential inputs ? four selectable, fixed gain settings ? internal oscillator ? short-circuit protection with auto recovery option ? under-voltage detection ? over-voltage protection ? pop noise and click noise reduction ? adjustable power limit function for speaker protection ? output dc detection for speaker protection ? filter-free operation ? over temperature protection with auto recovery ? dynamic temperature control prevents chip from over heating applications ? tv audio ? bluetooth speaker system ? docking speaker system ? consumer audio equipment
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 2 rev. a, 09/01/2014 typical application circuit IS31AP2110 vccl 100 f inr+ c inr+ 1 f left channel input 0.1 f sdb micro controller pbtl faultb inr- c inr- 1 f pgnd avdd plim fb fb outr- outr+ v cc 1nf 100k v cc 1k agnd 1 f 1 f r pl1 r pl2 inl+ c inl+ 1 f inl- c inl- 1 f fb fb outl- outl+ gain0 gain1 pgnd vccr 100 f 0.1 f v cc 1nf 1 2 3 4 5 6 8 9 11 12 14 10 15,16 18 19 20 23 24 25 27,28 right channel input 1nf 1nf 1nf 1nf figure 1 typical application circuit (for btl stereo, single-ended input) IS31AP2110 vccl 100 f inr+ c inr+ 1 f 0.1 f sdb micro controller pbtl faultb inr- c inr- 1 f pgnd avdd plim outr- outr+ v cc 1nf 100k v cc 1k agnd 1 f 1 f r pl1 r pl2 inl+ inl- outl- outl+ audio input gain0 gain1 pgnd vccr 100 f 0.1 f v cc 1nf 1 2 3 4 5 6 8 9 11 12 14 10 15,16 18 19 20 23 24 25 27,28 v cc fb fb 1000pf 1000pf figure 2 typical application circuit (for parallel btl mono, single-ended input)
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 3 rev. a, 09/01/2014 pin configuration package pin configuration (top view) etssop-28
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 4 rev. a, 09/01/2014 pin description no. pin description 1 sdb shutdown signal for ic (low = disabled, output hi-z; high = operational). voltage compliance to 26v. 2 faultb open drain output used to display short circuit or dc detect fault. voltage compliant to 26v. short circuit faults can be set to auto- recovery by connecting faultb pin to sdb pin. otherwise, both short circuit faults and dc detect faults must be reset by cycling v cc . 3 inl+ positive audio input for left channel. biased at 1.65v. 4 inl- negative audio input for left channel. biased at 1.65v. 5 gain0 gain select least significant bit. voltage compliance to 26v. 6 gain1 gain select most significant bit. voltage compliance to 26v. 7,13,17, 21,22,26 nc not connected. 8 agnd analog signal ground. connect to the thermal pad. 9 avdd 3.3v regulated output. 10 plim power limit level adjustment. connect a resistor divider from avdd to gnd to set power limit. give v plimit <1.55v to set power limit level. connect to both of avdd (>1.55v) and gnd are all without power limit feature. 11 inr- negative audio input for right channel. biased at 1.65v. 12 inr+ positive audio input for right channel. biased at 1.65v. 14 pbtl parallel btl mode switch, high for parallel btl output. voltage compliance to 26v. 15, 16 vccr high-voltage power supply for right-channel. right channel and left channel power supply inputs are connect internal. 18 outr+ class-d h-bridge positive output for right channel. 19 pgnd power ground for the h-bridges. 20 outr- class-d h-bridge negative output for right channel. 23 outl- class-d h-bridge negative output for left channel. 24 pgnd power ground for the h-bridges. 25 outl+ class-d h-bridge positive output for left channel. 27, 28 vccl high-voltage power supply for left-channel. right channel and left channel power supply inputs are connect internal. thermal pad connect to gnd.
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 5 rev. a, 09/01/2014 ordering information industrial range: -40c to +85c order part no. package qty IS31AP2110-zls2-tr IS31AP2110-zls2 etssop-28, lead-free 2500/reel 50/tube copyright ? ? ? 2014 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances ?
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 6 rev. a, 09/01/2014 absolute maximum ratings supply voltage (vccr, vccl), v cc - 0.3v ~ +30v interface pin voltage, (sdb, gain0, gain1, pbtl, faultb) (plim, inl+, inl-, inr+, inr-) - 0.3v ~ +26v - 0.3v ~ +3.6v minimum load resistance, r l , (btl: v cc > 15v) (btl: v cc 15v) pbtl 4.8 ? 3.2 ? 3.2 ? thermal resistance, ja 28c/w maximum junction temperature, t jmax 150c storage temperature range, t stg - 65c ~ +150c operating temperature range, t a ? 40c ~ +85c esd (hbm) esd (cdm) 2kv 500v note: stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only and functional operation of the device at t hese or any other condition beyond those i ndicated in the operational sections of th e specifications is not implied. exposure to absolute maximum rating condi tions for extended periods may affect device reliability. dc electrical characteristics v cc =24v, t a =25c, r l =8 ? (unless otherwise noted). symbol parameter condition min. typ. max. unit v cc supply voltage to vccl, vccr 8 26 v i cc quiescent current v sdb = 2v, no load 32 50 ma v sdb = 2v, no load, v cc = 12v 20 35 i sd shutdown current v sdb = 0.8v, no load <10 25 a v sdb = 0.8v, no load, v cc = 12v <10 25 r ds(on) drain-source on-state resistance-high side pmos v cc =12v, id=500ma, t j =25c 300 m ? drain-source on-state resistance-low side nmos 200 v os class-d output offset voltage (measured differentially) v i = 0, gain= 36db 10 mv g gain gain1= 0.8v, gain0=0.8v 18 20 22 db gain1= 0.8v, gain0= 2v 24 26 28 gain1= 2v, gain0= 0.8v 30 32 34 gain1= 2v, gain0= 2v 34 36 38 t on turn-on time v sdb = 2v 51 ms t off turn-off time v sdb = 0.8v 4 s av dd internal regulated output i avdd = 0.1ma 3.0 3.3 3.6 v logic electrical characteristics v ih high level input voltage sdb, gain0, gain1, pbtl 2 v v il low level input voltage sdb, gain0, gain1, pbtl 0.8 v v ol low level output voltage faultb,r pu =100k ? , v cc =26v 0.8 v i ih high level input current sdb,gain0,gain1,pbtl, v i =2v, v cc =18v 50 a i il low level input current sdb,gain0,gain1,pbtl, v i =0.8v, v cc =18v 5 a
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 7 rev. a, 09/01/2014 ac electrical characteristics v cc =24v, t a =25c, r l =8 ? (unless otherwise noted). symbol parameter condition min. typ. max. unit p o output power thd+n = 10%, f = 1khz, v cc = 13v 10 w thd+n = 10%, f = 1khz, v cc = 16v 15 thd+n total harmonic distortion + noise v cc =24v, r l =8 ? , f=1khz, p o =15w (half-power) 0.1 % v cc =12v, r l =8 ? , f=1khz, p o =5w (half-power) 0.11 v n output integrated noise 20hz to 22khz, a-weighted filter, gain = 20db, r l =8 ? 130 v snr signal-to-noise ratio maximum output at thd+n < 1%, f = 1khz, gain = 20db, a-weighted 102 db psrr power supply ripple rejection 200mv p-p ripple at 1khz, gain = 20db, inputs ac-coupled to agnd -62 db x talk crosstalk f=1khz, v o =1vrms, gain=20db -83 db f osc oscillator frequency 250 310 khz t sd thermal trip point 170 c t sd_hy thermal hysteresis 20 c
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 8 rev. a, 09/01/2014 typical performance characteristics thd+n(%) output power(w) 0.01 20 0.1 . 1 10 10m 80 20m 50m 100m 500m 1 2 5 10 20 r l = 4 ? +33h gain = 20db f = 1khz v cc = 8v v cc = 10v v cc = 12v v cc = 15v figure 3 thd+n vs. output power thd+n(%) output power(w) 0.01 20 0.1 . 1 10 10m 50 20m 50m 100m 500m 1 2 5 10 20 r l = 8 ? +66h gain = 20db f = 1khz v cc = 12v v cc = 15v v cc = 24v v cc = 18v figure 5 thd+n vs. output power output power(w) efficiency(% 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50 r l = 6 ? +47 h gain = 20db v cc = 18v v cc = 12v v cc = 15v figure 7 efficiency vs. output power thd+n(%) output power(w) 0.01 20 0.1 . 1 10 10m 80 20m 50m 100m 500m 1 2 5 10 20 r l = 6 ? +47h gain = 20db f = 1khz v cc = 12v v cc = 15v v cc = 24v v cc = 18v figure 4 thd+n vs. output power frequency(hz) thd+n(%) 20 50 100 200 500 1k 2k 5k 20k 0.001 20 0.01 . 0.1 1 5 v cc = 24v gain = 20db r l = 8 ? +66h po = 1w po = 5w po = 10w figure 6 thd+n vs. frequency output power(w) efficiency(% 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50 55 60 r l = 8 ? +66 h gain = 20db v cc = 12v v cc = 24v v cc = 18v v cc = 15v figure 8 efficiency vs. output power
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 9 rev. a, 09/01/2014 psrr(db) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(hz) +0 -100 -80 -60 -40 -20 r l = 8 ? +66 h gain = 20db v ripple = 0.2v pp v cc = 12v v cc = 18v v cc = 24v figure 9 psrr
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 10 rev. a, 09/01/2014 functional block diagram pgnd vccr outr+ vccl inr+ inr- gain gontrol amplifier power stage plimit modulator plim inl- inl+ outl+ outr- dynamic temperature control pwm logic outl- dc detect plimit gain gontrol amplifier power stage modulator pwm logic short-circuit protection pbtl select ramp generator bias & reference plimit reference control logic thermal detect under-voltage protection faultb logic gain select i/o buffer pbtl select short circuit error dc detect error regulator thermal warning thermal warning pgnd faultb agnd avdd gain0 gain1 sdb pbtl
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 11 rev. a, 09/01/2014 applications information gain settings the gain of the IS31AP2110 is set by two input pins, gain0 and gain1. by varying input resistance in IS31AP2110, the various volume gains are achieved. the respective volume gain and input resistance are listed in table 1. however, there is 20% variation in input resistance from production variation. table 1 volume gain and input impedance gain1 gain0 volume gain (db) input resistance, r in (k ? ) 0 0 20 60 0 1 26 30 1 0 32 15 1 1 36 9 shutdown (sdb) control pulling sdb pin low will let IS31AP2110 operate in low-current state for power conservation. the IS31AP2110 outputs will enter mute once sdb pin is pulled low, and regulator will also disable to save power. if let sdb pin floating, the chip will enter shutdown mode because of the internal pull low resistor. for the best power-off performance, place the chip in the shutdown mode in advance of removing the power supply. dc detection IS31AP2110 has dc detection circuit to protect the speakers from dc current which might be occurred as input capacitor defect or inputs short on printed circuit board. the detection circuit detects first volume amplifier stage output, when both differential outputs? voltage become higher than a determined voltage or lower than a determined voltage for more than 420ms, the dc detect error will occur and report to faultb pin. at the same time, loudspeaker drivers of right/left channel will disable and enter hi- z. this fault can?t be cleared by cycling sdb, it is necessary to cycle the v cc supply. the minimum differential input voltages required to trigger the dc detect function are shown in table2. the input voltage must keep above the voltage listed in the table for more than 420msec to trigger the dc detect fault. the equivalent class-d output duty of the dc detect threshold is listed in table3. for 8v supply, dc detect fault will occur as output duty exceed 13% for more than 420msec. table 2 dc detect threshold av (db) v in (mv, differential) 20 104 26 52 32 26 36 16 table 3 output dc detect duty (for either channel) v cc (v) output duty exceeds 8 13% 12 8.7% 16 6.5% 24 4.3% thermal protection if the internal junction temperature is higher than 170 o c, the outputs of loud speaker drivers will be disabled and at low state. the temperature for IS31AP2110 returning to normal operation is about 150 o c. the variation of protected temperature is about 10%. thermal protection faults are not reported on the faultb pin. short-circuit protection to protect loudspeaker dr ivers from over-current damage, IS31AP2110 has built-in short-circuit protection circuit. when the wires connected to loudspeakers are shorted to each other or shorted to gnd or to v cc , overload detectors may activate. once one of right and left channel overload detectors are active, the am plifier outputs will enter a hi-z state and the protection latch is engaged. the short protection fault is reported on faultb pin as a low state. the latch can be cleared by reset sdb or power supply cycling. the short circuit protection latch can have auto- recovery function by connect the faultb pin directly to sdb pin. the latch state will be released after 420ms, and the short protection latch will re- cycle if output overload is detected again. under-voltage detection when the avdd voltage is lower than 2.7v or the v cc voltage is lower than 7.5v, loudspeaker drivers of right/left channel will be disabled and kept at low state. otherwise, IS31AP2110 return to normal operation.
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 12 rev. a, 09/01/2014 over-voltage protection when the v cc is higher than 30v, loudspeaker will be disabled kept at low stat e. the protection status will be released as v cc lower than 28.7v. power limit function the voltage at plim pin (pin 10) can used to limit the power of first gain control amplifier output. add a resistor divider from avdd to ground to set the voltage v plimit at the plimit pin. the voltage v plim sets a limit on the output peak-to-peak voltage. the maximum btl output voltage of the gain control amplifier is limited to 2 (1.55v?v plim ). the class-d btl output voltage on loudspeaker is amplified by 9.95 of 2 (1.55v?v plim ). for normal btl operation (stereo) and pbtl (mono) operation: ?? ?? l p out r v p ? ? ? ? ? 2 95 . 9 2 2 for unclipped power (1) where: - v p is the peak voltage of gain control amplifier output, if (v in gv /2) < (1.55v?v plim ), then v p = (v in gv /2). if (v in gv /2) > (1.55v?v plim ), then v p = (1.55v? v plim ). - v in is the input peak voltage. - gv is the gain of gain control amplifier, the four gain levels are 1v/v, 2v/v, 4v/v, 6.34v/v, corresponding to 20db, 26db, 32db, 36db overall gain. - avdd is the regulator output at pin 9, typical 3.3v. - r l is the load resistance. - p out (10% thd) = 1.25 x p out (unclipped). figure 10 gain contribution of the two gain stages table 4 plim typical operation te s t conditions output p o (w) v plim (v) @ thd+n=1 % v plim (v) @ thd+n=1 0% output voltage (v p-p ) v cc =24v r l =8 ? 25 0.54 0.65 40 20 0.65 0.75 35.6 15 0.77 0.85 30.8 10 0.91 0.98 25.2 5 1.1 1.15 17.8 note: connect plim pin to avdd (>1.55v) or gnd (either one) to disable power limit function. pbtl (mono) function IS31AP2110 provides the application of parallel btl operation with two outputs of each channel connected directly. if the pbtl pin is tied high, the positive and negative outputs of left and right channel are synchronized and in phase. apply the input signal to the right channel input in pbtl mode and let the left channel input grounded, and place the speaker between the left and right outputs. the output current capability is doubled of that in normal mode. see the application circuit example for pbtl (mono) mode operation. for normal btl (stereo) operation, connect the pbtl pin to ground. dynamic temperature control (dtc) the dtc function is designed to protect the loudspeaker from over heating. as the junction temperature is higher than ot_w, the gain of amplifier will decrease step by step every 0.25s. finally, as the junction temperature is lower than ot_r, the attenuated gain steps will be released step by step every 0.5s. if dtc can?t suppress the temperature and the temperature reach to the ot trip point (170 o c), the amplifier will be shutdown. the ot hysteresis temperature equals to ot_r. typically, ot_w is 160 o c and ot_r is 145 o c.
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 13 rev. a, 09/01/2014 figure 11 dynamic temperature control function input capacitors (c in ) the performance at low frequency (bass) is affected by the corner frequency (f c ) of the high-pass filter composed of input resistor (r in ) and input capacitor (c in ), determined in equation (2). typically, a 0.1f or 1f ceramic capacitor is suggested for c in . the resistance of input resistor s is different at different gain setting. the respective gain and input resistance are listed in table 1 (shown at gain setting). however, there is 20% variation in input resistance from production variation. ?? hz c r 2 1 f in in c ? (2) figure 12 corner frequency ferrite bead selection if the traces from the IS31AP2110 to speaker are short, the ferrite bead filters can reduce the high frequency emissions to meet fcc requirements. a ferrite bead that has very low impedance at low frequency and high impedance at high frequency (above 1mhz) is recommended. the impedance of the ferrite bead can be used along with a small capacitor with a value around 1000pf to reduce the frequency spectrum of the signal to an acceptable level. figure 13 typical ferrite bead filter output lc filter if the traces from the IS31AP2110 to speaker are not short, it is recommended to add the output lc filter to eliminate the high frequency emissions. figure 14 shows the typical output filter for 8 ? speaker with a cut-off frequency of 27khz and figure 15 shows the typical output filter for 4 ? speaker with a cut-off frequency of 27khz. figure 14 typical lc output filter for 8 ? speaker figure 15 typical lc output filter for 4 ? speaker
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 14 rev. a, 09/01/2014 power supply decoupling capacitor (c s ) because of the power loss on the trace between the device and decoupling capacitor, the decoupling capacitor should be placed close to vccr/l and pgnd to reduce any parasitic resistor or inductor. a low esr ceramic capacitor, typically 1000pf, is suggested for high frequency noise rejection. for mid-frequency noise filtering, place a capacitor typically 0.1f or 1f as close as possible to the device vccr/l leads works best. for lo w frequency noise filtering, a 100f or greater capacitor (tantalum or electrolytic type) is suggested. figure 16 recommended power supply decoupling capacitors.
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 15 rev. a, 09/01/2014 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 17 classification profile
IS31AP2110 integrated silicon solution, inc. ? www.issi.com 16 rev. a, 09/01/2014 package information etssop-28

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